Assoc. Prof. Dr. Haiou Wang | Best Researcher Award

Assoc. Prof. Dr. Haiou Wang | Best Researcher Award

Hangzhou Dianzi University | China

Dr. Haiou Wang is an accomplished Associate Professor at Hangzhou Dianzi University, China, specializing in spintronics and magnetic materials. He earned his Ph.D. in Physics from Nanjing University of Science and Technology in 2013 and has since established a strong academic and research career in condensed matter physics and materials science. Since joining Hangzhou Dianzi University in 2014, he has progressed from Assistant Professor to Associate Professor, contributing significantly to the study of magnetoresistance, magnetic phase transitions, and spin transport phenomena. Dr. Wang has published over 79 scientific documents, accumulating 690 citations with an h-index of 15, reflecting his consistent influence in the field. His notable works include studies on LaMnO₃, BaMnO₃, and Nd₁−ₓSrₓMnO₃ compounds, elucidating their structure–property relationships and magnetotransport mechanisms. Beyond his research contributions, Dr. Wang has served as a Guest Editor and Topic Editor for MDPI journals, demonstrating his leadership within the scholarly community. His research has been supported by the National Natural Science Foundation of China, highlighting his role in advancing materials for next-generation spintronic devices. Dr. Wang continues to pursue innovative research bridging magnetic materials and spintronics, contributing to the future of electronic and energy technologies.

Profiles : Scopus | Orcid 

Featured Publications

Li, J., Wang, H., & Wang, H. (2025). Structure, magnetism, and transport properties in hexagonal LaMnO₃. Journal of Electronic Materials. https://doi.org/10.1007/s11664-025-12473-7

Wang, H., Zhao, B., Tan, W., & Wang, H. (2025). Enhanced stability of lead-free CsSnI₃ perovskite through structural optimization. Journal of Materials Science: Materials in Electronics. https://doi.org/10.1007/s10854-025-15480-w

Wang, H., Li, J., & Wang, H. (2025). Magnetism, magnetoresistance, and temperature coefficient of resistance of the BaMnO₃ compound. Journal of Materials Science: Materials in Electronics. https://doi.org/10.1007/s10854-025-15446-y

Huang, S., Hua, J., Su, K., Yang, L., Wang, H., & Li, C. (2024). Anisotropic magnetoelectric effect in quasi-one-dimensional antiferromagnet Cu₃Mo₂O₉. Applied Physics Letters. https://doi.org/10.1063/5.0243143

Wang, H., Dong, F., Zhao, B., Tan, W., Huang, S., Su, K., Yang, L., & Wang, H. (2024). The colossal magnetoresistance within a wide temperature range in LaMnO₃ compound. Journal of Materials Science: Materials in Electronics. https://doi.org/10.1007/s10854-024-13490-8