Assoc. Prof. Dr. Haiou Wang | Best Researcher Award

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Assoc. Prof. Dr. Haiou Wang | Best Researcher Award

Hangzhou Dianzi University | China

Dr. Haiou Wang is an accomplished Associate Professor at Hangzhou Dianzi University, China, specializing in spintronics and magnetic materials. He earned his Ph.D. in Physics from Nanjing University of Science and Technology in 2013 and has since established a strong academic and research career in condensed matter physics and materials science. Since joining Hangzhou Dianzi University in 2014, he has progressed from Assistant Professor to Associate Professor, contributing significantly to the study of magnetoresistance, magnetic phase transitions, and spin transport phenomena. Dr. Wang has published over 79 scientific documents, accumulating 690 citations with an h-index of 15, reflecting his consistent influence in the field. His notable works include studies on LaMnO₃, BaMnO₃, and Nd₁−ₓSrₓMnO₃ compounds, elucidating their structure–property relationships and magnetotransport mechanisms. Beyond his research contributions, Dr. Wang has served as a Guest Editor and Topic Editor for MDPI journals, demonstrating his leadership within the scholarly community. His research has been supported by the National Natural Science Foundation of China, highlighting his role in advancing materials for next-generation spintronic devices. Dr. Wang continues to pursue innovative research bridging magnetic materials and spintronics, contributing to the future of electronic and energy technologies.

Profiles : Scopus | Orcid 

Featured Publications

Li, J., Wang, H., & Wang, H. (2025). Structure, magnetism, and transport properties in hexagonal LaMnO₃. Journal of Electronic Materials. https://doi.org/10.1007/s11664-025-12473-7

Wang, H., Zhao, B., Tan, W., & Wang, H. (2025). Enhanced stability of lead-free CsSnI₃ perovskite through structural optimization. Journal of Materials Science: Materials in Electronics. https://doi.org/10.1007/s10854-025-15480-w

Wang, H., Li, J., & Wang, H. (2025). Magnetism, magnetoresistance, and temperature coefficient of resistance of the BaMnO₃ compound. Journal of Materials Science: Materials in Electronics. https://doi.org/10.1007/s10854-025-15446-y

Huang, S., Hua, J., Su, K., Yang, L., Wang, H., & Li, C. (2024). Anisotropic magnetoelectric effect in quasi-one-dimensional antiferromagnet Cu₃Mo₂O₉. Applied Physics Letters. https://doi.org/10.1063/5.0243143

Wang, H., Dong, F., Zhao, B., Tan, W., Huang, S., Su, K., Yang, L., & Wang, H. (2024). The colossal magnetoresistance within a wide temperature range in LaMnO₃ compound. Journal of Materials Science: Materials in Electronics. https://doi.org/10.1007/s10854-024-13490-8

Mr. Zahid Ullah | Best Researcher Award

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Mr. Zahid Ullah | Best Researcher Award

Islamia College University Peshawar | Pakistan 

Dr. Zahid Ullah is a computational materials scientist currently serving as a Scholar at Qurtuba University of Science and Information Technology, Peshawar, and pursuing his PhD in Physics at Islamia College Peshawar. With an h‑index of 12, over 1,100 citations, and multiple high-impact publications, he has established a strong presence in theoretical and computational condensed matter physics. His research focuses on first-principles calculations, employing density functional theory (DFT) and WIEN2k/CASTEP computational frameworks to investigate the structural, electronic, thermoelectric, and magnetic properties of materials such as spinels (MgGa₂O₄, ZnAl₂O₄) and ternary tellurides (KAlTe₂, KInTe₂). He has contributed significantly to understanding energy‑conversion materials, magnetic semiconductors, and thermoelectric performance, guiding experimental and theoretical developments for sustainable energy solutions and advanced electronic/spintronic applications. Notable publications include studies on high-temperature thermoelectric performance of MgGa₂O₄ and the electronic and magnetic characteristics of KAlTe₂ and KInTe₂. His work integrates materials informatics with computational modeling to predict and optimize material behaviors. Dr. Ullah’s ongoing research aims to design next-generation functional materials, and he is recognized for his early-career contributions to computational materials science. His efforts provide critical insights that bridge fundamental physics with practical applications in energy, electronics, and spintronics.

Profiles : Orcid | Google Scholar

Featured Publications

Ullah, Z., Khan, R., Khan, M. A., Al Otaibi, S., Althubeiti, K., & Abdullaev, S. (2025). High-temperature thermoelectric performance of spinel MgGa2O4 through a first-principles and Boltzmann transport study. Computational Materials Science, 259, 114163. https://doi.org/10.1016/j.commatsci.2025.114163

Ullah, Z., Amir, M., Bazilla, A., Ullah, S., Shahzad, U., Ullah, N., Khan, J., & Gul, S. (2024). Electronic, thermoelectric and magnetic properties of ternary telluride KAlTe2 and KInTe2 from theoretical perspective. Next Research, 1(2), 100077. https://doi.org/10.1016/j.nexres.2024.100077

Khan, M. A., & Ullah, Z. (2025). First-principles study of electronic, structural, and thermoelectric nature. Theoretical Chemistry Accounts, 144(8), 61. https://doi.org/10.1007/s00214-025-03000-0

Ullah, Z., Khan, M. A., Gul, S., Noman, M., Ullah, S., & Shahab, M. (2025). Remarkable thermoelectric and magnetic properties of anti-perovskite MgCNi3: A pathway to advanced energy conversion and spintronics. Journal of Superconductivity and Novel Magnetism, 38(4), 167. https://doi.org/10.1007/s10948-025-08800-5

Ullah, Z., & Khan, M. A. (2025). First-principles study of ZnAl2O4 for energy applications. International Journal of Modern Physics B, 2550270. https://doi.org/10.1142/S0217979225502704

Prof. Adel Asheri | Best Researcher Award

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Prof. Adel Asheri | Best Researcher Award

National Research Centre | Egypt

Professor Adel Ashery is a distinguished physicist and head of the Department of Solid State Physics at the National Research Center (NRC), Cairo, Egypt. He earned his Ph.D. in Physics from the Leningrad Institute of Electronic Engineering (Russia) in 1990, following a B.Sc. in Physics from Cairo University (1982) and a Science Diploma from Russia (1987). With an extensive academic and research career, Professor Ashery has made significant contributions to the fields of solid-state physics, semiconductor devices, and thin-film technology. His research primarily focuses on the preparation and characterization of single-crystal devices and thin films using advanced techniques such as liquid phase epitaxy, electrochemical ionization, sol-gel methods, photolithography, and chemical vapor deposition. He has authored over 89 scientific publications, accumulating 996 citations and an h-index of 17, demonstrating his impactful scholarship. His recent works explore interfacial engineering, dielectric tunability, and optoelectronic properties of novel heterojunction structures, contributing to advancements in resistive memory, RRAM, and high-κ electronics. Professor Ashery’s dedication to experimental innovation and material development has positioned him as a leading researcher in condensed matter and electronic materials science, continuing to inspire progress in semiconductor device engineering.

Profiles :  Scopus | Orcid

Featured Publications

Ashery, A. (2025). Interfacial engineering and dielectric tunability in Ag/Al/SiO₂/n-Si/Ag heterostructures: Novel insights for resistive memory and high-κ electronics. Physica B: Condensed Matter, 417758.

Ashery, A. (2025). Ag/MWCNTs-PVA composite/n-Si/Ag exhibits a novel combination of high electrical conductance and tunable capacitance in magnitude and sign. ECS Journal of Solid State Science and Technology.

Ashery, A., Gaballah, A. E. H., Elmoghazy, E., & Kabatas, M. A. B. M. (2025). Investigation of the optoelectronic properties of a novel polypyrrole–multi-well carbon nanotubes/titanium oxide/aluminum oxide/p-silicon heterojunction. Nanotechnology Reviews, 14(1), 20250174.

Ashery, A., Gaballah, A. E. H., Elnasharty, M. M. M., & Kabatas, M. A. B. M. (2024). Dielectric properties of epitaxially grown lattice-mismatched GaAs/p-Si heterojunction diode. iScience, 27(9).

Ashery, A., Gaballah, A. E. H., Turky, G. M., & Basyooni-Murat Kabatas, M. A. (2024). Gel-based PVA/SiO₂/p-Si heterojunction for electronic device applications. Gels, 10(8), 537.

Ashery, A., Gaballah, A. E. H., & Farag, A. A. M. (2024). Optical characterization of high-quality spin-coated PVA nanostructured films for photo-sensing application. Physica B: Condensed Matter, 687, 416088.

Dr. Sekhar Reddy Kola | Best Researcher Award

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Dr. Sekhar Reddy Kola | Best Researcher Award

National Yang Ming Chiao Tung University | Taiwan

Dr. Sekhar Reddy Kola is a Postdoctoral Fellow in the Department of Electrical and Computer Engineering at National Yang Ming Chiao Tung University (NYCU), Taiwan. He earned his Ph.D. in Semiconductor Devices from NYCU, where he focused on the process variation effect and intrinsic parameter fluctuation of vertically stacked gate-all-around (GAA) silicon nanosheet complementary field-effect transistors (CFETs) under the supervision of Prof. Yiming Li. With a solid academic foundation, including an M.Sc. in Electronics and a B.S. in Mathematics, Electronics, and Computer Science from Sri Venkateswara University, India, Dr. Kola has made significant contributions to the field of semiconductor device physics and modeling. His research interests encompass GAA nanosheet and nanowire FETs, CFET design, statistical process variation modeling, reliability analysis, and machine learning applications in nanoelectronics. He has published 33 documents with over 311 citations and an h-index of 10, reflecting his impactful scientific contributions. Dr. Kola has received several honors, including the Best Paper Award at IEDMS 2018 and the Outstanding Foreign Student Scholarship from NYCU. Through his innovative research on nanoscale device modeling and variability analysis, Dr. Kola continues to advance the development of next-generation semiconductor technologies for sub-1-nm nodes.

Profiles : Google Scholar | Scopus | Orcid

Featured Publications

Kola, S. R., & Li, Y. (2025). Effects of bottom channel coverage ratio on leakage current and static power consumption of vertically stacked GAA Si NS FETs. ECS Journal of Solid State Science and Technology, 14(2), 025001.

Kola, S. R., Li, Y., & Butola, R. (2024). Statistical device simulation and machine learning of process variation effects of vertically stacked gate-all-around Si nanosheet CFETs. IEEE Transactions on Nanotechnology, 23, 386–392.

Kola, S. R., & Li, Y. (2023). Electrical characteristic and power fluctuations of GAA Si NS CFETs by simultaneously considering six process variation factors. IEEE Open Journal of Nanotechnology, 4, 112–120.

Sreenivasulu, V. B., Kumari, N. A., Kola, S. R., Singh, J., & Li, Y. (2023). Exploring the performance of 3-D nanosheet FET in inversion and junctionless modes: Device and circuit-level analysis and comparison. IEEE Access, 11, 42256–42265.

Kola, S. R., Li, Y., & Thoti, N. (2020). Effects of a dual spacer on electrical characteristics and random telegraph noise of gate-all-around silicon nanowire p-type MOSFETs. Japanese Journal of Applied Physics, 59(SGGA02).