Mr. Harish Verma | Best Researcher Award

Mr. Harish Verma | Best Researcher Award

Indian Institute of Technology (Banaras Hindu University) Varanasi | India

Dr. Harish Verma holds a B.Sc (UG), B.Ed, M.Sc (PG), and M.Phil in Physics and has qualified the CSIR-NET JRF examination. He is currently pursuing a Ph.D. in energy storage, dielectric materials, density functional theory (DFT), artificial intelligence (AI), and machine learning (ML) at the Indian Institute of Technology (BHU), Varanasi. His research focuses on the synthesis and characterization of advanced functional materials such as oxide perovskites, spinels, and graphene-based nanocomposites for dielectric and electrochemical energy storage applications. Dr. Verma integrates computational DFT analysis with AI- and ML-assisted materials modeling to accelerate the design and optimization of high-performance materials. His recent works include studies on dielectric and conductivity behavior of SrCeO₃, Ru-doped CNT/graphene-oxide supercapacitors, and MgAl₀.₅Fe₁.₅O₄ spinel ferrite systems. With over 20 scientific publications, an h-index of 6, and more than 90 citations, he has contributed significantly to understanding charge transport, dielectric relaxation, and structure–property relationships in multifunctional ceramics. His research aims to bridge experimental materials science and computational intelligence for developing sustainable, next-generation energy storage technologies and smart functional materials with enhanced performance and stability.

Profile : Google Scholar

Featured Publications

Verma, H., Tripathi, A., & Upadhyay, S. (2024). A comprehensive study of dielectric, modulus, impedance, and conductivity of SrCeO₃ synthesized by the combustion method. International Journal of Applied Ceramic Technology, 21(4), 3032–3047.

Verma, S., Das, T., Verma, S., Pandey, V. K., Pandey, S. K., Verma, H., & Verma, B. (2025). Hierarchically architecture of Ru-doped multichannel carbon nanotubes embedded with graphene oxide for supercapacitor material with long-term cyclic stability. Fuel, 381, 133517.

Verma, S., Maurya, A., Verma, H., Singh, R., & Bhoi, B. (2024). Unveiling the characteristics of MgAl₀.₅Fe₁.₅O₄ spinel ferrite: A study of structural, optical, and dielectric properties. Chemical Physics Impact, 9, 100674.

Nirala, G., Katheriya, T., Yadav, D., Verma, H., & Upadhyay, S. (2023). The evolution of coil-less inductive behaviour in La-doped Sr₂MnO₄. Emergent Materials, 6(6), 1951–1962.

Verma, H., Kumar, P., Satyarthi, S. K., Bhattacharya, B., Singh, A. K., & Upadhyay, S. (2025). Investigation of La₂FeO₄–rGO nanocomposite electrode material for symmetric and asymmetric supercapacitor. Journal of Energy Storage, 114, 115849.

Prof. Adel Asheri | Best Researcher Award

Prof. Adel Asheri | Best Researcher Award

National Research Centre | Egypt

Professor Adel Ashery is a distinguished physicist and head of the Department of Solid State Physics at the National Research Center (NRC), Cairo, Egypt. He earned his Ph.D. in Physics from the Leningrad Institute of Electronic Engineering (Russia) in 1990, following a B.Sc. in Physics from Cairo University (1982) and a Science Diploma from Russia (1987). With an extensive academic and research career, Professor Ashery has made significant contributions to the fields of solid-state physics, semiconductor devices, and thin-film technology. His research primarily focuses on the preparation and characterization of single-crystal devices and thin films using advanced techniques such as liquid phase epitaxy, electrochemical ionization, sol-gel methods, photolithography, and chemical vapor deposition. He has authored over 89 scientific publications, accumulating 996 citations and an h-index of 17, demonstrating his impactful scholarship. His recent works explore interfacial engineering, dielectric tunability, and optoelectronic properties of novel heterojunction structures, contributing to advancements in resistive memory, RRAM, and high-κ electronics. Professor Ashery’s dedication to experimental innovation and material development has positioned him as a leading researcher in condensed matter and electronic materials science, continuing to inspire progress in semiconductor device engineering.

Profiles :  Scopus | Orcid

Featured Publications

Ashery, A. (2025). Interfacial engineering and dielectric tunability in Ag/Al/SiO₂/n-Si/Ag heterostructures: Novel insights for resistive memory and high-κ electronics. Physica B: Condensed Matter, 417758.

Ashery, A. (2025). Ag/MWCNTs-PVA composite/n-Si/Ag exhibits a novel combination of high electrical conductance and tunable capacitance in magnitude and sign. ECS Journal of Solid State Science and Technology.

Ashery, A., Gaballah, A. E. H., Elmoghazy, E., & Kabatas, M. A. B. M. (2025). Investigation of the optoelectronic properties of a novel polypyrrole–multi-well carbon nanotubes/titanium oxide/aluminum oxide/p-silicon heterojunction. Nanotechnology Reviews, 14(1), 20250174.

Ashery, A., Gaballah, A. E. H., Elnasharty, M. M. M., & Kabatas, M. A. B. M. (2024). Dielectric properties of epitaxially grown lattice-mismatched GaAs/p-Si heterojunction diode. iScience, 27(9).

Ashery, A., Gaballah, A. E. H., Turky, G. M., & Basyooni-Murat Kabatas, M. A. (2024). Gel-based PVA/SiO₂/p-Si heterojunction for electronic device applications. Gels, 10(8), 537.

Ashery, A., Gaballah, A. E. H., & Farag, A. A. M. (2024). Optical characterization of high-quality spin-coated PVA nanostructured films for photo-sensing application. Physica B: Condensed Matter, 687, 416088.