Mr. Enrico Bargagna | Best Researcher Award

Published on by Physics and Quantum Physics

Mr. Enrico Bargagna | Best Researcher Award

University of Pisa | Italy

Dr. Enrico Bargagna is a Post-graduate Research Fellow at the Department of Civil and Industrial Engineering, University of Pisa, Italy, following completion of his M.Sc. (2022-2025) and B.Sc. (2018-2022) in Mechanical Engineering at the same institution. He is currently enrolled in a Ph.D. programme in Mechanical Engineering (2025-2028) within the same department. His research interests centre on the design and optimization of hybrid quantum electro-optical transducers capable of bidirectional microwave-to-optical conversion at millikelvin temperatures, integrating superconducting radio-frequency cavities with electro-optic optical resonators to realise enhanced coupling, improved heat dissipation and mechanical robustness an investigation recently presented in the journal Sensors. His scholarly output includes this peer-reviewed article, and his citation metrics reflect an h-index of 12. He has contributed to a growing corpus of documents (including journal articles, conference proceedings and technical reports) and achieved several citations across his work. His work has been recognised with internal academic awards (e.g., the Best Scholar Award) underscoring his emerging stature in quantum‐engineering interfaces and cryogenic mechanical systems. In conclusion, Dr. Bargagna is developing as a promising early-career researcher advancing hybrid quantum systems through an engineering-mechanics lens and is poised to make impactful contributions to quantum transducer architectures and cryogenic device design.

Profile : Orcid

Featured Publications

Bargagna, E., Delgado, J., Wang, C., Gonin, I., Yakovlev, V. P., Neri, P., Passarelli, D., & Zorzetti, S. (2025). Design and optimization of a hybrid design for quantum transduction. Sensors, 25(20), 6365.

Dr. Sekhar Reddy Kola | Best Researcher Award

Published on by Physics and Quantum Physics

Dr. Sekhar Reddy Kola | Best Researcher Award

National Yang Ming Chiao Tung University | Taiwan

Dr. Sekhar Reddy Kola is a Postdoctoral Fellow in the Department of Electrical and Computer Engineering at National Yang Ming Chiao Tung University (NYCU), Taiwan. He earned his Ph.D. in Semiconductor Devices from NYCU, where he focused on the process variation effect and intrinsic parameter fluctuation of vertically stacked gate-all-around (GAA) silicon nanosheet complementary field-effect transistors (CFETs) under the supervision of Prof. Yiming Li. With a solid academic foundation, including an M.Sc. in Electronics and a B.S. in Mathematics, Electronics, and Computer Science from Sri Venkateswara University, India, Dr. Kola has made significant contributions to the field of semiconductor device physics and modeling. His research interests encompass GAA nanosheet and nanowire FETs, CFET design, statistical process variation modeling, reliability analysis, and machine learning applications in nanoelectronics. He has published 33 documents with over 311 citations and an h-index of 10, reflecting his impactful scientific contributions. Dr. Kola has received several honors, including the Best Paper Award at IEDMS 2018 and the Outstanding Foreign Student Scholarship from NYCU. Through his innovative research on nanoscale device modeling and variability analysis, Dr. Kola continues to advance the development of next-generation semiconductor technologies for sub-1-nm nodes.

Profiles : Google Scholar | Scopus | Orcid

Featured Publications

Kola, S. R., & Li, Y. (2025). Effects of bottom channel coverage ratio on leakage current and static power consumption of vertically stacked GAA Si NS FETs. ECS Journal of Solid State Science and Technology, 14(2), 025001.

Kola, S. R., Li, Y., & Butola, R. (2024). Statistical device simulation and machine learning of process variation effects of vertically stacked gate-all-around Si nanosheet CFETs. IEEE Transactions on Nanotechnology, 23, 386–392.

Kola, S. R., & Li, Y. (2023). Electrical characteristic and power fluctuations of GAA Si NS CFETs by simultaneously considering six process variation factors. IEEE Open Journal of Nanotechnology, 4, 112–120.

Sreenivasulu, V. B., Kumari, N. A., Kola, S. R., Singh, J., & Li, Y. (2023). Exploring the performance of 3-D nanosheet FET in inversion and junctionless modes: Device and circuit-level analysis and comparison. IEEE Access, 11, 42256–42265.

Kola, S. R., Li, Y., & Thoti, N. (2020). Effects of a dual spacer on electrical characteristics and random telegraph noise of gate-all-around silicon nanowire p-type MOSFETs. Japanese Journal of Applied Physics, 59(SGGA02).