Assoc. Prof. Dr. Jonas Duarte | Top Applied Physicist Award

Federal University Western of Pará | Brazil

Dr. Jonas Marinho Duarte earned both a Licenciatura and a Bachelor’s degree in Physics from the Federal University of Pará (UFPA), followed by an M.Sc. (2019–2021) and a Ph.D. (2021–2025) in Electrical Engineering from the same institution. Since July 2025, he has served as a Professor in the Faculty of Mining Engineering at the Federal University of Western Pará (UFOPA) in Santarém, Brazil. His research focuses on two-dimensional carbon allotropes, nanoelectronics and electronic transport modulation, terahertz and microstrip antenna design using novel graphene-like patch resonators, and active learning methodologies in solar-energy education and environmental outreach. He has published peer-reviewed articles in journals such as Optical & Quantum Electronics, Physica E, and Computational Condensed Matter. Jonas Duarte’s current (unverified) research metrics include an h-index of approximately 0, around 5 published documents, and about 2 citations. He is developing a strong early-career, multidisciplinary profile that bridges physics, electrical engineering, and materials science through both teaching and research. In summary, Jonas Duarte is an emerging scholar-educator who actively connects advanced materials modeling with device engineering, positioning himself for significant future impact.

Profile : Orcid

Featured Publications

Cardoso, D. H., Miranda, I. R. S., Mota, E. A. V., Duarte, J. M., dos Santos da Silva, S. J., da Silva, C. A. B., & Del Nero, J. (2025). Numerical implementation of phagraphene as patch resonator for a microstrip antenna. Optical and Quantum Electronics, 57(84), Article 08404. https://doi.org/10.1007/s11082-025-08404-9

Quaresma, L. C., Ferreira, D. F. S., Duarte, J. M., Moreira, M. M., da Silva, C. A. B. Jr., & Del Nero, J. (2025, December). Eigenchannel visualization and transition-voltage spectroscopy in two-dimensional C57 allotrope. Computational Condensed Matter, 36, e01169. https://doi.org/10.1016/j.cocom.2025.e01169

Quaresma, L. C., Duarte, J. M., Ferreira, D. F. S., da Silva, C. A. B. Jr., & Del Nero, J. (2025, October). Electronic transport modulation in C57: A path toward carbon-based logic and switching devices. Physica E: Low-Dimensional Systems and Nanostructures, 163, 116340. https://doi.org/10.1016/j.physe.2025.116340

Duarte, J. M., Santos, J. C. S., Ferreira, D. F. S., Paula, M. V. S., Mota, E. A. V., da Silva, C. A. B., & Del Nero, J. (2025, March). Systematic investigation of a metallic quadrilateral nanoribbon graphene allotrope for application in nanoelectronics. Computational Condensed Matter, 34, e01007. https://doi.org/10.1016/j.cocom.2025.e01007

Duarte, J. M. (2024, November). Metodologias ativas e educação ambiental: Uma revisão integrativa sobre abordagens inovadoras para o ensino de energia solar. Ensino e Tecnologia em Revista, 18(4), 1–15.

Dr. Sekhar Reddy Kola | Best Researcher Award

National Yang Ming Chiao Tung University | Taiwan

Dr. Sekhar Reddy Kola is a Postdoctoral Fellow in the Department of Electrical and Computer Engineering at National Yang Ming Chiao Tung University (NYCU), Taiwan. He earned his Ph.D. in Semiconductor Devices from NYCU, where he focused on the process variation effect and intrinsic parameter fluctuation of vertically stacked gate-all-around (GAA) silicon nanosheet complementary field-effect transistors (CFETs) under the supervision of Prof. Yiming Li. With a solid academic foundation, including an M.Sc. in Electronics and a B.S. in Mathematics, Electronics, and Computer Science from Sri Venkateswara University, India, Dr. Kola has made significant contributions to the field of semiconductor device physics and modeling. His research interests encompass GAA nanosheet and nanowire FETs, CFET design, statistical process variation modeling, reliability analysis, and machine learning applications in nanoelectronics. He has published 33 documents with over 311 citations and an h-index of 10, reflecting his impactful scientific contributions. Dr. Kola has received several honors, including the Best Paper Award at IEDMS 2018 and the Outstanding Foreign Student Scholarship from NYCU. Through his innovative research on nanoscale device modeling and variability analysis, Dr. Kola continues to advance the development of next-generation semiconductor technologies for sub-1-nm nodes.

Featured Publications

Kola, S. R., & Li, Y. (2025). Effects of bottom channel coverage ratio on leakage current and static power consumption of vertically stacked GAA Si NS FETs. ECS Journal of Solid State Science and Technology, 14(2), 025001.

Kola, S. R., Li, Y., & Butola, R. (2024). Statistical device simulation and machine learning of process variation effects of vertically stacked gate-all-around Si nanosheet CFETs. IEEE Transactions on Nanotechnology, 23, 386–392.

Kola, S. R., & Li, Y. (2023). Electrical characteristic and power fluctuations of GAA Si NS CFETs by simultaneously considering six process variation factors. IEEE Open Journal of Nanotechnology, 4, 112–120.

Sreenivasulu, V. B., Kumari, N. A., Kola, S. R., Singh, J., & Li, Y. (2023). Exploring the performance of 3-D nanosheet FET in inversion and junctionless modes: Device and circuit-level analysis and comparison. IEEE Access, 11, 42256–42265.

Kola, S. R., Li, Y., & Thoti, N. (2020). Effects of a dual spacer on electrical characteristics and random telegraph noise of gate-all-around silicon nanowire p-type MOSFETs. Japanese Journal of Applied Physics, 59(SGGA02).