Prof. Adel Asheri | Best Researcher Award

National Research Centre | Egypt

Professor Adel Ashery is a distinguished physicist and head of the Department of Solid State Physics at the National Research Center (NRC), Cairo, Egypt. He earned his Ph.D. in Physics from the Leningrad Institute of Electronic Engineering (Russia) in 1990, following a B.Sc. in Physics from Cairo University (1982) and a Science Diploma from Russia (1987). With an extensive academic and research career, Professor Ashery has made significant contributions to the fields of solid-state physics, semiconductor devices, and thin-film technology. His research primarily focuses on the preparation and characterization of single-crystal devices and thin films using advanced techniques such as liquid phase epitaxy, electrochemical ionization, sol-gel methods, photolithography, and chemical vapor deposition. He has authored over 89 scientific publications, accumulating 996 citations and an h-index of 17, demonstrating his impactful scholarship. His recent works explore interfacial engineering, dielectric tunability, and optoelectronic properties of novel heterojunction structures, contributing to advancements in resistive memory, RRAM, and high-κ electronics. Professor Ashery’s dedication to experimental innovation and material development has positioned him as a leading researcher in condensed matter and electronic materials science, continuing to inspire progress in semiconductor device engineering.

Profiles : Scopus | Orcid

Featured Publications

Ashery, A. (2025). Interfacial engineering and dielectric tunability in Ag/Al/SiO₂/n-Si/Ag heterostructures: Novel insights for resistive memory and high-κ electronics. Physica B: Condensed Matter, 417758.

Ashery, A. (2025). Ag/MWCNTs-PVA composite/n-Si/Ag exhibits a novel combination of high electrical conductance and tunable capacitance in magnitude and sign. ECS Journal of Solid State Science and Technology.

Ashery, A., Gaballah, A. E. H., Elmoghazy, E., & Kabatas, M. A. B. M. (2025). Investigation of the optoelectronic properties of a novel polypyrrole–multi-well carbon nanotubes/titanium oxide/aluminum oxide/p-silicon heterojunction. Nanotechnology Reviews, 14(1), 20250174.

Ashery, A., Gaballah, A. E. H., Elnasharty, M. M. M., & Kabatas, M. A. B. M. (2024). Dielectric properties of epitaxially grown lattice-mismatched GaAs/p-Si heterojunction diode. iScience, 27(9).

Ashery, A., Gaballah, A. E. H., Turky, G. M., & Basyooni-Murat Kabatas, M. A. (2024). Gel-based PVA/SiO₂/p-Si heterojunction for electronic device applications. Gels, 10(8), 537.

Ashery, A., Gaballah, A. E. H., & Farag, A. A. M. (2024). Optical characterization of high-quality spin-coated PVA nanostructured films for photo-sensing application. Physica B: Condensed Matter, 687, 416088.

Dr. Sekhar Reddy Kola | Best Researcher Award

National Yang Ming Chiao Tung University | Taiwan

Dr. Sekhar Reddy Kola is a Postdoctoral Fellow in the Department of Electrical and Computer Engineering at National Yang Ming Chiao Tung University (NYCU), Taiwan. He earned his Ph.D. in Semiconductor Devices from NYCU, where he focused on the process variation effect and intrinsic parameter fluctuation of vertically stacked gate-all-around (GAA) silicon nanosheet complementary field-effect transistors (CFETs) under the supervision of Prof. Yiming Li. With a solid academic foundation, including an M.Sc. in Electronics and a B.S. in Mathematics, Electronics, and Computer Science from Sri Venkateswara University, India, Dr. Kola has made significant contributions to the field of semiconductor device physics and modeling. His research interests encompass GAA nanosheet and nanowire FETs, CFET design, statistical process variation modeling, reliability analysis, and machine learning applications in nanoelectronics. He has published 33 documents with over 311 citations and an h-index of 10, reflecting his impactful scientific contributions. Dr. Kola has received several honors, including the Best Paper Award at IEDMS 2018 and the Outstanding Foreign Student Scholarship from NYCU. Through his innovative research on nanoscale device modeling and variability analysis, Dr. Kola continues to advance the development of next-generation semiconductor technologies for sub-1-nm nodes.

Featured Publications

Kola, S. R., & Li, Y. (2025). Effects of bottom channel coverage ratio on leakage current and static power consumption of vertically stacked GAA Si NS FETs. ECS Journal of Solid State Science and Technology, 14(2), 025001.

Kola, S. R., Li, Y., & Butola, R. (2024). Statistical device simulation and machine learning of process variation effects of vertically stacked gate-all-around Si nanosheet CFETs. IEEE Transactions on Nanotechnology, 23, 386–392.

Kola, S. R., & Li, Y. (2023). Electrical characteristic and power fluctuations of GAA Si NS CFETs by simultaneously considering six process variation factors. IEEE Open Journal of Nanotechnology, 4, 112–120.

Sreenivasulu, V. B., Kumari, N. A., Kola, S. R., Singh, J., & Li, Y. (2023). Exploring the performance of 3-D nanosheet FET in inversion and junctionless modes: Device and circuit-level analysis and comparison. IEEE Access, 11, 42256–42265.

Kola, S. R., Li, Y., & Thoti, N. (2020). Effects of a dual spacer on electrical characteristics and random telegraph noise of gate-all-around silicon nanowire p-type MOSFETs. Japanese Journal of Applied Physics, 59(SGGA02).