National Research Centre | Egypt
Professor Adel Ashery is a distinguished physicist and head of the Department of Solid State Physics at the National Research Center (NRC), Cairo, Egypt. He earned his Ph.D. in Physics from the Leningrad Institute of Electronic Engineering (Russia) in 1990, following a B.Sc. in Physics from Cairo University (1982) and a Science Diploma from Russia (1987). With an extensive academic and research career, Professor Ashery has made significant contributions to the fields of solid-state physics, semiconductor devices, and thin-film technology. His research primarily focuses on the preparation and characterization of single-crystal devices and thin films using advanced techniques such as liquid phase epitaxy, electrochemical ionization, sol-gel methods, photolithography, and chemical vapor deposition. He has authored over 89 scientific publications, accumulating 996 citations and an h-index of 17, demonstrating his impactful scholarship. His recent works explore interfacial engineering, dielectric tunability, and optoelectronic properties of novel heterojunction structures, contributing to advancements in resistive memory, RRAM, and high-κ electronics. Professor Ashery’s dedication to experimental innovation and material development has positioned him as a leading researcher in condensed matter and electronic materials science, continuing to inspire progress in semiconductor device engineering.
Featured Publications
Ashery, A. (2025). Interfacial engineering and dielectric tunability in Ag/Al/SiO₂/n-Si/Ag heterostructures: Novel insights for resistive memory and high-κ electronics. Physica B: Condensed Matter, 417758.
Ashery, A. (2025). Ag/MWCNTs-PVA composite/n-Si/Ag exhibits a novel combination of high electrical conductance and tunable capacitance in magnitude and sign. ECS Journal of Solid State Science and Technology.
Ashery, A., Gaballah, A. E. H., Elmoghazy, E., & Kabatas, M. A. B. M. (2025). Investigation of the optoelectronic properties of a novel polypyrrole–multi-well carbon nanotubes/titanium oxide/aluminum oxide/p-silicon heterojunction. Nanotechnology Reviews, 14(1), 20250174.
Ashery, A., Gaballah, A. E. H., Elnasharty, M. M. M., & Kabatas, M. A. B. M. (2024). Dielectric properties of epitaxially grown lattice-mismatched GaAs/p-Si heterojunction diode. iScience, 27(9).
Ashery, A., Gaballah, A. E. H., Turky, G. M., & Basyooni-Murat Kabatas, M. A. (2024). Gel-based PVA/SiO₂/p-Si heterojunction for electronic device applications. Gels, 10(8), 537.
Ashery, A., Gaballah, A. E. H., & Farag, A. A. M. (2024). Optical characterization of high-quality spin-coated PVA nanostructured films for photo-sensing application. Physica B: Condensed Matter, 687, 416088.